Sign In | Join Free | My frbiz.com
China Guangdong Zhufeng Electric Co., Ltd. logo
Guangdong Zhufeng Electric Co., Ltd.
Verified Supplier

1 Years

Home > General Electric Accessories >

Insulated Gate Bipolar Transistor IGBT Power Module Semiconductor Device for inverter

Guangdong Zhufeng Electric Co., Ltd.
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now

Insulated Gate Bipolar Transistor IGBT Power Module Semiconductor Device for inverter

Brand Name : ZFeng

Payment Terms : L/C,D/A,D/P,T/T,Western Union,MoneyGram

Delivery Time : 3 Days

MOQ : 1 PC

Supply Ability : 500-10000 per Month

Packaging Details : Carton Box

Certification : CE、CB、CCC、ISO9001、ISO14001、ISO45001、EN61439、EN61000

Price : ¥170 ~ 310

Current : 15 ~ 200A

Contact Now

ZFeng IGBT Module

IGBT Module (Insulated Gate Bipolar Transistor Module) is a power semiconductor device module that integrates multiple IGBT chips, free-wheeling diodes (FWDs), and associated drive/protection circuits. It is widely applied in power electronics conversion and control systems.

1. Core Components and Operating Principles

  • IGBT Chips: The core of the module, combining the high input impedance of MOSFETs and the low on-state voltage drop of bipolar transistors, enabling high-speed switching and low losses.
  • Free-Wheeling Diodes (FWDs): Connected in anti-parallel with IGBTs to release energy stored in inductive loads, preventing voltage spikes from damaging devices.
  • Drive and Protection Circuits: Integrated with functions such as signal isolation, overcurrent/overvoltage protection, and temperature monitoring to ensure stable module operation.
  • Packaging Technology: Utilizes ceramic substrates, copper baseplates, etc., optimizing thermal performance (thermal resistance as low as 0.1–0.2 K/W) and enhancing electrical insulation.

2. Technical Advantages

  • High Power Density: Modular design significantly increases power-handling capability per unit volume. For example, Infineon's PrimePACK™ modules enable hundreds of kilowatts to megawatts of output.
  • High Reliability: Through redundant design, fault self-diagnosis, and thermal management technologies, modules achieve a mean time between failures (MTBF) exceeding 100,000 hours in industrial applications like variable frequency drives.
  • Ease of Use: Built-in drive circuits simplify system design, allowing users to quickly deploy applications by providing only control signals and power.

3. Typical Application Scenarios

  • Industrial Drives: Used in motor speed control, fan/pump regulation.
  • Renewable Energy Generation: In photovoltaic inverters, IGBT modules convert DC to AC for grid integration.

Product Tags:

inverter igbt power module

      

Semiconductor igbt power module

      

Insulated inverter igbt module

      
China Insulated Gate Bipolar Transistor IGBT Power Module Semiconductor Device for inverter wholesale

Insulated Gate Bipolar Transistor IGBT Power Module Semiconductor Device for inverter Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: Guangdong Zhufeng Electric Co., Ltd.
*Subject:
*Message:
Characters Remaining: (0/3000)